Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures

被引：1

作者：

Deshpande, MR

Sleight, JW

Reed, MA

Wheeler, RG

Matyi, RJ

机构：

[1] YALE UNIV,DEPT APPL PHYS,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

[3] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1996年 / 20卷 / 04期

基金：

美国国家科学基金会;

关键词：

resonant tunneling heterostructures; spin g factor; electron tunneling rates;

D O I：

10.1006/spmi.1996.0109

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zeeman splitting of the ground state of single impurities in the quantum wells of resonant tunneling heterostructures is reported. We determine the absolute magnitude of the effective magnetic spin splitting factor g(perpendicular to)* for a single impurity in a 44 Angstrom Al0.27Ga0.73As/GaAs/Al0.27Ga0.73As quantum well to be 0.28 +/- 0.02. This system also allows for independent measurement of the electron tunneling rates through the two potential barriers and estimation of the occupation probability of the impurity state in the quantum well. (C) 1996 Academic Press Limited

引用

页码：513 / 522

页数：10

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[3]

Deshpande M. R., 1993, Proceedings. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.93CH3235-9), P177, DOI 10.1109/CORNEL.1993.303084

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