Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe

被引：19

作者：

Brus, V. V. ^{[1
]}

Ilashchuk, M. I. ^{[2
]}

Khomyak, V. V. ^{[2
]}

Kovalyuk, Z. D. ^{[1
]}

Maryanchuk, P. D. ^{[2
]}

Ulyanytsky, K. S. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Frantsevich Inst Mat Sci Problems, Chernivtsi Dept, UA-58001 Chernovtsy, Ukraine

[2] Fedkovich Chernivtsi Natl Univ, UA-27401258 Chernovtsy, Ukraine

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 09期

关键词：

THIN-FILMS; INTERFACE STATES; CAPACITANCE; MECHANISMS; EFFICIENCY; TRANSPORT;

D O I：

10.1134/S1063782612090059

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Anisotype surface-barrier n-Cd0.5Zn0.5O/p-CdTe heterojunctions are fabricated by the high-frequency sputtering of a Cd0.5Zn0.5O alloy film onto a freshly cleaved single-crystal CdTe surface. The main electrical properties of the heterojunctions are studied and the dominant mechanisms of charge transport are established, namely, the multistage tunnel-recombination mechanism under forward bias, Frenkel-Pool emission, and tunneling under forward bias. The influence of the surface electrically active states at the heterojunction interface is analyzed and their surface concentration is evaluated: N (ss) similar to 10(14) cm(-2).

引用

页码：1152 / 1157

页数：6

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