Mechanisms of charge transport in anisotype n-TiO2/p-CdTe heterojunctions

被引：24

作者：

Brus, V. V. ^{[1
]}

Ilashchuk, M. I. ^{[2
]}

Kovalyuk, Z. D. ^{[1
]}

Maryanchuk, P. D. ^{[2
]}

Ulyanytsky, K. S. ^{[1
]}

Gritsyuk, B. N. ^{[2
]}

机构：

[1] Natl Acad Sci Ukraine, Frantsevich Inst Problems Mat Sci, Chernivtsi Branch, UA-58001 Chernovtsy, Ukraine

[2] Fedkovich Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 08期

关键词：

SOLAR-CELL; ELECTRICAL-PROPERTIES; CDTE; ABSORBER; CONTACTS;

D O I：

10.1134/S1063782611080045

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Surface-barrier anisotype n-TiO2/p-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.

引用

页码：1077 / 1081

页数：5

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