Infrared imaging of the nanometer-thick accumulation layer in organic field-effect transistors

被引：61

作者：

Li, ZQ ^{[1
]}

Wang, GM

Sai, N

Moses, D

Martin, MC

Di Ventra, M

Heeger, AJ

Basov, DN

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Calif Santa Barbara, Inst Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Mitsubishi Chem Ctr Adv Mat, Santa Barbara, CA 93106 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source Div, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2006年 / 6卷 / 02期

关键词：

D O I：

10.1021/nl052166+

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on infrared (IR) spectromicroscopy of the electronic excitations in nanometer-thick accumulation layers in field-effect transistor (FET) devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

引用

页码：224 / 228

页数：5

共 26 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].