Growth and characterization of sparsely dispersed ZnO nanowires

被引：15

作者：

Hsueh, Ting-Jen ^{[1
]}

Hsu, Cheng-Liang

Chang, Shoou-Jinn

Lin, Yan-Ru

Lin, Tzer-Shen

Chen, I-Cherng

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[4] Ind Technol Res Inst, Photovolta Technol Ctr, Hsinchu 31040, Taiwan

[5] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 31040, Taiwan

[6] Ind Technol Res Inst S, Micro Syst Technol Ctr, Tainan 709, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2007年 / 154卷 / 03期

关键词：

D O I：

10.1149/1.2424415

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This investigation describes the growth of sparsely dispersed vertical ZnO nanowires on sputtered-ZnO:Ga/sapphire templates by self-catalyzed vapor liquid solid method. Experimental results indicate that these ZnO nanowires grew with the preferred (002) orientation with good crystal quality. Conductive diamond-coated point probe forms Schottky contact on single ZnO nanowire with a sharp turn-on voltage of similar to 2.5 V and a barrier height of approximately 0.38 eV. (c) 2007 The Electrochemical Society.

引用

页码：H153 / H156

页数：4

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