Observation of moving dislocation kinks and unpinning

被引：126

作者：

Kolar, HR ^{[1
]}

Spence, JCH ^{[1
]}

Alexander, H ^{[1
]}

机构：

[1] UNIV COLOGNE,ABT MET PHYS,INST PHYS 2,D-50937 COLOGNE,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.77.4031

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomic resolution electron microscopy has been used to obtain images of moving dislocation kinks on partial dislocations at 600 degrees C in silicon. Video difference images are used to obtain direct estimates of kink velocity. Observations of kink delay at obstacles, thought to be oxygen atoms at the dislocation core, yield unpinning energies and parameters of the obstacle theory of kink motion. The kink formation energy is obtained from the distribution of kink pair separations in low-dose images and is compared to the kink migration energy. Unlike metals, kink migration rather than formation controls the velocity of unobstructed dislocations in silicon under these experimental conditions.

引用

页码：4031 / 4034

页数：4

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