1.25 volt, low cost, embedded FLASH memory for low density applications

被引：22

作者：

McPartland, RJ ^{[1
]}

Singh, R ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Allentown, PA 18103 USA

来源：

2000 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIC.2000.852878

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4K-bit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density nonvolatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.

引用

页码：158 / 161

页数：4