Improved Growth Behavior of Atomic-Layer-Deposited High-k Dielectrics on Multilayer MoS2 by Oxygen Plasma Pretreatment

被引：175

作者：

Yang, Jaehyun ^{[1
]}

Kim, Sunkook ^{[2
]}

Choi, Woong ^{[3
]}

Park, Sang Han ^{[4
]}

Jung, Youngkwon ^{[2
]}

Cho, Mann-Ho ^{[4
]}

Kim, Hyoungsub ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] Kyung Hee Univ, Inst Laser Engn, Coll Elect & Informat, Yongin 446701, South Korea

[3] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[4] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

MoS2; oxygen plasma treatment; atomic layer deposition; Al2O3; HfO2;

D O I：

10.1021/am303261c

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water oxidant. Due to the formation of an ultrathin Mo-oxide layer on the MoS2 surface, the surface coverage of Al2O3 and HfO2 films was significantly improved compared to those on pristine MoS2, even at a high ALD temperature. These results indicate that the surface modification of MoS2 by oxygen plasma treatment can have a major impact on the subsequent deposition of high-k thin films, with important implications on their integration in thin film transistors.

引用

页码：4739 / 4744

页数：6

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