Near-infrared semiconductor subwavelength-wire lasers

被引：121

作者：

Chin, AH ^{[1
]}

Vaddiraju, S

Maslov, AV

Ning, CZ

Sunkara, MK

Meyyappan, M

机构：

[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Moffett Field, CA 94035 USA

[2] Univ Louisville, Dept Chem Engn, Louisville, KY 40292 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 16期

关键词：

D O I：

10.1063/1.2198017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report near-infrared lasing in the telecommunications band in gallium antimonide semiconductor subwavelength wires. Our results open the possibility of the use of semiconductor subwavelength-wire lasers in future photonic integrated circuits for telecommunications applications. (c) 2006 American Institute of Physics.

引用

页数：3

共 16 条

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