Switching field variation in patterned submicron magnetic film elements

被引:130
作者
Zheng, YF
Zhu, JG
机构
[1] Department of Electrical Engineering, University of Minnesota, Minneapolis
关键词
D O I
10.1063/1.364629
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, a micromagnetic study of magnetic switching properties on submicron scale single layer and multilayer thin film elements is presented. Even at deep submicron scale, there exist various edge domain configurations at the saturation remanent state. It is found that the switching field of these patterned film elements can strongly depend on these edge domain configurations. If the edge domains are not controlled, switching field of a patterned magnetic film element can vary significantly during repeated switching processes. (C) 1997 American Institute of Physics.
引用
收藏
页码:5471 / 5473
页数:3
相关论文
共 6 条
[1]   Magnetic force microscopy of single-domain single-crystal iron particles with uniaxial surface anisotropy [J].
New, RMH ;
Pease, RFW ;
White, RL ;
Osgood, RM ;
Babcock, K .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :5851-5853
[2]  
PRINZ GA, COMMUNICATION
[3]   SPIN-VALVE RAM CELL [J].
TANG, DD ;
WANG, PK ;
SPERIOSU, VS ;
LE, S ;
KUNG, KK .
IEEE TRANSACTIONS ON MAGNETICS, 1995, 31 (06) :3206-3208
[4]  
TEHRANI S, COMMUNICATION
[5]   SIZE EFFECTS OF SWITCHING FIELDS OF THIN PERMALLOY PARTICLES [J].
YUAN, SW ;
BERTRAM, HN ;
SMYTH, JF ;
SCHULTZ, S .
IEEE TRANSACTIONS ON MAGNETICS, 1992, 28 (05) :3171-3173
[6]   Micromagnetics of spin valve memory cells [J].
Zheng, YF ;
Zhu, JG .
IEEE TRANSACTIONS ON MAGNETICS, 1996, 32 (05) :4237-4239