Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth

被引:4
作者
Watanabe, M [1 ]
Kakimoto, K [1 ]
Eguchi, M [1 ]
Hibiya, T [1 ]
机构
[1] KYUSHU UNIV,INST ADV MAT STUDY,KASUGA,FUKUOKA 816,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 10期
关键词
Si single crystal; Czochralski crystal growth; heat and mass transfer;
D O I
10.1143/JJAP.36.6181
中图分类号
O59 [应用物理学];
学科分类号
摘要
The modification of heat transfer in molten silicon during Czochralski (CZ) crystal growth is discussed by focusing on the transition of the flow mode from axisymmetric to nonaxisymmetric, in order to clarify the mechanism of crystal-melt interface shape deformation. Heat transfer in silicon melt is observed by measuring the difference in temperature near the crucible wall and at the crystal-melt interface with simultaneous observation of molten silicon flow. We confirm that the heat transfer coefficient of silicon melt is reduced when the flow mode is changed from axisymmetric to non-axisymmetric. The crystal-melt interface shape changed as a result of the modified heat transfer, which is due to the flow mode transition from axisymmetric to non-axisymmetric.
引用
收藏
页码:6181 / 6186
页数:6
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