Solid-phase epitaxial growth of CoSi2 on clean and oxygen-adsorbed Si(001) surfaces

被引：18

作者：

Hayashi, Y

Yoshinaga, M

Ikeda, H

Zaima, S

Yasuda, Y

机构：

[1] Nagoya Municipal Ind Res Inst, Dept Elect, Atsuta Ku, Nagoya, Aichi 4560058, Japan

[2] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Ctr Cooperat Res Adv Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

SURFACE SCIENCE | 1999年 / 438卷 / 1-3期

关键词：

CoSi3; epitaxy; oxygen adsorption; scanning tunneling microscopy; Si(001); solid-phase growth;

D O I：

10.1016/S0039-6028(99)00559-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth behavior of epitaxial CoSi2(001) films on clean Si(001) surfaces and oxidized Si(001) surfaces with oxygen coverages below 2 ML has been investigated by scanning tunneling microscopy. In the solid-phase epitaxy of 3 ML-thick Co on clean Si surfaces at 530 degrees C, rectangular-shaped CoSi2(001) three-dimensional (3D) islands elongated along the <110) direction were grown on thermally stable two-dimensional layers of CoSi2(001). This fact suggests that the CoSi2/Si(001) epitaxial growth obeys a Stranski-Krastanov-like mode. The shape of 3D islands is considered to be explained by energetics to reduce the surface energy of CoSi2. Moreover, it is found that oxygen atoms act as a kind of surfactant to lower the surface energy of CoSi2. Almost pinhole-free and atomically-hat epitaxial CoSi2(001) films with a thickness of 6 ML can be realized by solid-phase epitaxy under the condition of an annealing temperature of 470 degrees C and oxygen coverages of 1-2 ML. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：116 / 122

页数：7

共 13 条

[1] SCANNING-TUNNELING-MICROSCOPY STUDIES OF NUCLEATION AND GROWTH IN A REACTIVE, EPITAXIAL SYSTEM - CO/SI(111) [J].