Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer

被引：17

作者：

Fujii, H ^{[1
]}

Kanemaru, S ^{[1
]}

Hiroshima, H ^{[1
]}

Gorwadkar, SM ^{[1
]}

Matsukawa, T ^{[1
]}

Itoh, J ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 146卷 / 1-4期

关键词：

field emitter arrays; silicon-on-insulator wafer; electron beam lithography; field emission; edge emitter;

D O I：

10.1016/S0169-4332(99)00007-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Si thin-film edge emitters with various gaps ranging from 15 nm to 55 nm were fabricated and characterized. Smooth, straight nanometer-scale gaps were made on a silicon-on-insulator wafer by using advanced microfabrication technology based on electron beam lithography, dry etching, and thermal oxidation. Electron emission occurred from voltage around 60 V and reached 100 nA at 70 V. The emission characteristics show no clear dependence on the gap distance. Measurements were also done in air to evaluate current leakage through nanogaps. Fabrication, structure, and emission characteristics are described in detail. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：203 / 208

页数：6

共 5 条

[1]

AUBERTONHERVE AJ, 1996, P 2 INT S ADV SCI TE, P214

[2] CHARACTERISTICS OF SIO2 AS A HIGH-RESOLUTION ELECTRON-BEAM RESIST [J].

HIROSHIMA, H ;

KOMURO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B) :6153-6157

[3] FABRICATION AND CHARACTERIZATION OF COMB-SHAPED LATERAL FIELD-EMITTER ARRAYS [J].

ITOH, J ;

TSUBURAYA, K ;

KANEMARU, S ;

WATANABE, T ;

ITOH, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A) :1221-1226

[4] Nanometer-scale gap control for low voltage and high current operation of field emission array [J].

Lee, HI ;

Park, SS ;

Park, DI ;

Hahm, SH ;

Lee, JH ;

Lee, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02) :762-764

[5]

NOMURA I, 1996, P IDW 96, P523

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