Surface segregation of Ge at SiGe(001) by concerted exchange pathways

被引：31

作者：

Boguslawski, P

Bernholc, J

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.88.166101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The segregation of Ge during growth on SiGe(001) surfaces was investigated by ab initio calculations. Four processes involving adatoms rather than ad-dimers were considered. The two most efficient channels proceed by the concerted exchange mechanism and involve a swap between an incorporated Ge and a Si adatom, or between Si and Ge in the first and the second surface layers, respectively. The calculated activation energies of similar to1.5 eV explain well the high-temperature experimental data. Segregation mechanisms involving step edges are much less efficient.

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页码：4 / 166101

页数：4

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