Measuring Ge segregation by real-time stress monitoring during Si1-xGex molecular beam epitaxy

被引：63

作者：

Floro, JA

Chason, E

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 25期

关键词：

D O I：

10.1063/1.117119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Real-time stress measurements during Si1-xGex/Si molecular beam epitaxy are used to dynamically monitor Ge surface segregation. Segregation during alloy growth produces a change in the surface stress that offsets the coherency stress in the pseudomorphic film. We outline a method for analyzing the stress evolution kinetics to determine the alloy composition profile resulting from segregation. (C) 1996 American Institute of Physics.

引用

页码：3830 / 3832

页数：3

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