INVOLVEMENT OF THE TOPMOST GE LAYER IN THE GE SURFACE SEGREGATION DURING SI/GE HETEROSTRUCTURE FORMATION

被引：56

作者：

FUJITA, K

FUKATSU, S

YAGUCHI, H

SHIRAKI, Y

ITO, R

机构：

[1] Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Meguro-ku, Tokyo 153

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 18期

关键词：

D O I：

10.1063/1.106082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface segregation of Ge atoms during Si/Ge heterostructure formation by molecular beam epitaxy has been investigated by x-ray photoemission spectroscopy varying the Ge layer thickness. It has been found that only the Ge atoms of the topmost layer are involved in the surface segregation, leaving the rest of the Ge atoms intact. This result supports the basic idea of the two-state-exchange model.

引用

页码：2240 / 2241

页数：2

共 9 条

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