REALIZATION OF ABRUPT INTERFACES IN SI/GE SUPERLATTICES BY SUPPRESSING GE SURFACE SEGREGATION WITH SUBMONOLAYER OF SB

被引：88

作者：

FUJITA, K

FUKATSU, S

YAGUCHI, H

IGARASHI, T

SHIRAKI, Y

ITO, R

机构：

[1] Research Center for Advanced Science and Technology, The University of Tokyo, Meguro-ku, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

Mass spectrometry; Molecular beam epitaxy; Secondary ion; Si/Ge strained-layer superlattice; Surface segregation; X-ray photoemission spectroscopy;

D O I：

10.1143/JJAP.29.L1981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic mixing in Si/Ge strained-layer superlattices is investigated by means of SiMS and XPS. The interfacial mixing is attributed to the surface segregation of Ge atoms during MBE growth of Si overlayers. it is demonstrated that the surface segregation is remarkably suppressed by depositing infmonolayer Sb atoms on Ge layers prior to Si overgrowth and that Ge layers are confined to within 0.8 nm. © 1990 IOP Publishing Ltd.

引用

页码：L1981 / L1983

页数：3

共 6 条

[1] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES [J].