GE SURFACE SEGREGATION AT LOW-TEMPERATURE DURING SIGE GROWTH BY MOLECULAR-BEAM EPITAXY

被引：49

作者：

GODBEY, DJ ^{[1
]}

LILL, JV ^{[1
]}

DEPPE, J ^{[1
]}

HOBART, KD ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD 20785

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.112277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of germanium surface segregation during growth by solid source SiGe molecular beam epitaxy (MBE) was studied by x-ray photoelectron spectroscopy and kinetic Monte Carlo (KMC) modeling. Germanium segregation persisted at temperatures 60-degrees-C below that predicted by a two-state exchange model. KMC simulations, where film growth, surface diffusion, and surface segregation are modeled consistently, successfully describe the low temperature segregation of germanium. Realistic descriptions of MBE must follow the physical rates of the growth, surface diffusion, and surface segregation processes.

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页码：711 / 713

页数：3

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