STEP STABILITY, DOMAIN COVERAGE, AND NONEQUILIBRIUM KINETICS IN SI(001) MOLECULAR-BEAM EPITAXY

被引:24
作者
CLARKE, S
WILBY, MR
VVEDENSKY, DD
KAWAMURA, T
MIKI, K
TOKUMOTO, H
机构
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
[2] YAMANASHI UNIV,KOFU,YAMANASHI 400,JAPAN
[3] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 14期
关键词
D O I
10.1103/PhysRevB.41.10198
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vicinal (2×1)/(1×2) domain surfaces are studied by computer simulation, with attention focused upon the evolution of monatomic steps in which upper terrace dimers are orientated either normal or parallel to the step edge. Comparison with half-integer-order reflection high-energy electron-diffraction intensities demonstrates a pronounced dependence of step stability on growth rate. Further support for the model is provided by a scanning tunneling micrograph of the equilibrated surface. © 1990 The American Physical Society.
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页码:10198 / 10201
页数:4
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