INFLUENCE OF SURFACE-MORPHOLOGY UPON RECOVERY KINETICS DURING INTERRUPTED EPITAXIAL-GROWTH

被引：21

作者：

CLARKE, S ^{[1
]}

VVEDENSKY, DD ^{[1
]}

RICKETTS, MW ^{[1
]}

机构：

[1] IBM UK LTD,UK SCI CTR,WINCHESTER S023 9DR,HANTS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

Electrons--Diffraction - Mathematical Statistics--Monte Carlo Methods - Semiconductor Devices--Heterojunctions;

D O I：

10.1016/0022-0248(89)90343-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The recovery of the RHEED specular intensity during interrupted MBE is investigated by application of a Monte Carlo simulation of the solid-on-solid model. Procedures are described for characterizing the pathways and quantifying energy barriers to surface recovery in both low- and high-temperature limits in ways that complement and extend existing techniques.

引用

页码：28 / 31

页数：4

共 10 条

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662
[2] EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER
CLARKE, S
VVEDENSKY, DD
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 340 - 342
[3] GROWTH-KINETICS AND STEP DENSITY IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY
CLARKE, S
VVEDENSKY, DD
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2272 - 2283
[4] THE APPLICATION OF RHEED INTENSITY EFFECTS TO INTERRUPTED GROWTH AND INTERFACE FORMATION DURING MBE GROWTH OF GAAS/(AL, GA)AS STRUCTURES
JOYCE, BA
ZHANG, J
NEAVE, JH
DOBSON, PJ
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (03): : 255 - 260
[5] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES
LENT, CS
COHEN, PI
[J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154
[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS
LEWIS, BF
GRUNTHANER, FJ
MADHUKAR, A
LEE, TC
FERNANDEZ, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1317 - 1322
[7] THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS
MADHUKAR, A
GHAISAS, SV
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 14 (01): : 1 - 130
[8] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[9] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY
SAKAKI, H
TANAKA, M
YOSHINO, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L417 - L420
[10] Weeks J.D., 1979, ADV CHEM PHYS, V40, P525

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