GROWTH-KINETICS AND STEP DENSITY IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY

被引：158

作者：

CLARKE, S

VVEDENSKY, DD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 07期

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D O I：

10.1063/1.341041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2272 / 2283

页数：12

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共 22 条

[1] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100)
CHEN, P
KIM, JY
MADHUKAR, A
CHO, NM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 890 - 895
[2] EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER
CLARKE, S
VVEDENSKY, DD
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 340 - 342
[3] ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH
CLARKE, S
VVEDENSKY, DD
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (21) : 2235 - 2238
[4] CLARKE S, 1987, SURF SCI, V36, P9312
[5] CLARKE S, 1987, PHYS REV B, V189, P1033
[6] ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY
GHAISAS, SV
MADHUKAR, A
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (10) : 1066 - 1069
[7] Henzler M., 1977, Electron spectroscopy for surface analysis, P117
[8] MONOLAYER AND MULTILAYER GROWTH OF CU ON THE RU(0001) SURFACE
HOUSTON, JE
PEDEN, CHF
BLAIR, DS
GOODMAN, DW
[J]. SURFACE SCIENCE, 1986, 167 (2-3) : 427 - 436
[9] RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS
JOYCE, BA
DOBSON, PJ
NEAVE, JH
WOODBRIDGE, K
ZHANG, J
LARSEN, PK
BOLGER, B
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 423 - 438
[10] KAWAMURA T, 1987, SURF SCI, V181, pL171, DOI 10.1016/0039-6028(87)90191-9