SIMULATION OF RECOVERY KINETICS IN SI(001) MOLECULAR-BEAM EPITAXY

被引:27
作者
CLARKE, S
WILBY, MR
VVEDENSKY, DD
KAWAMURA, T
机构
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,SEMICOND MAT INTERDISCIPLINARY RES CTR,LONDON SW7 2BZ,ENGLAND
[2] YAMANASHI UNIV,KOFU,YAMANASHI 400,JAPAN
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 02期
关键词
D O I
10.1103/PhysRevB.40.1369
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1369 / 1372
页数:4
相关论文
共 18 条
[1]  
AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662
[2]   COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION [J].
BERGER, PR ;
BHATTACHARYA, PK ;
SINGH, J .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) :2856-2860
[3]   STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694
[4]   EPITAXIAL-GROWTH QUALITY OPTIMIZATION BY SUPERCOMPUTER [J].
CLARKE, S ;
VVEDENSKY, DD .
APPLIED PHYSICS LETTERS, 1987, 51 (05) :340-342
[5]   ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238
[6]   INFLUENCE OF SURFACE STEP DENSITY ON REFLECTION HIGH-ENERGY-ELECTRON DIFFRACTION SPECULAR INTENSITY DURING EPITAXIAL-GROWTH [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW B, 1987, 36 (17) :9312-9314
[7]   GROWTH-MECHANISM FOR MOLECULAR-BEAM EPITAXY OF GROUP-IV SEMICONDUCTORS [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW B, 1988, 37 (11) :6559-6562
[8]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) OSCILLATIONS AT 77-K [J].
EGELHOFF, WF ;
JACOB, I .
PHYSICAL REVIEW LETTERS, 1989, 62 (08) :921-924
[9]  
GRIFFITH JE, 1988, MATER RES SOC S P, V116, P27
[10]   OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].
ICHIKAWA, M ;
DOI, T .
APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143