Probing organic field effect transistors in situ during operation using SFG

被引：81

作者：

Ye, Hongke

Abu-Akeel, Ashraf

Huang, Jia

Katz, Howard E.

Gracias, David H. ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Chem & Biomol Engn, Baltimore, MD 21218 USA

[2] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

[3] Johns Hopkins Univ, Dept Chem, Baltimore, MD 21218 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 20期

关键词：

D O I：

10.1021/ja060442w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this communication, we report results obtained using surface-sensitive IR+Visible Sum Frequency Generation (SFG) nonlinear optical spectroscopy on interfaces of organic field effect transistors during operation. We observe remarkable correlations between trends in the surface vibrational spectra and electrical properties of the transistor, with changes in gate voltage (VG). These results suggest that field effects on electronic conduction in thin film organic semiconductor devices are correlated to interfacial nonlinear optical characteristics and point to the possibility of using SFG spectroscopy to monitor electronic properties of OFETs. Copyright © 2006 American Chemical Society.

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页码：6528 / 6529

页数：2

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