Low voltage complementary organic inverters

被引：33

作者：

De Vusser, S ^{[1
]}

Steudel, S ^{[1
]}

Myny, K ^{[1
]}

Genoe, J ^{[1
]}

Heremans, P ^{[1
]}

机构：

[1] IMEC, MCP, PME, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 16期

关键词：

D O I：

10.1063/1.2197604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a method for integrating n- and p-type organic thin-film transistors (OTFTs) on the same substrate. An integrated shadow mask was used for the n- and p-type semiconductor patterning. The integrated shadow mask can be aligned with submicron accuracy relative to the OTFT substrate. This allows for the integration at transistor level of n- and p-type OTFTs on the same substrate. A complementary inverter was fabricated, showing excellent performance while operating at a supply voltage of 2 V. (c) 2006 American Institute of Physics.

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页数：3

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