Influence of transistor parameters on the noise margin of organic digital circuits

被引：77

作者：

De Vusser, S ^{[1
]}

Genoe, J

Heremans, P

机构：

[1] IMEC, B-3001 Heverlee, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Heverlee, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 04期

关键词：

digital circuit robustness; noise margin; organic thin-film transistors (OTFTs); yield;

D O I：

10.1109/TED.2006.870876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The concept of noise margin is crucial in the design and operation of digital logic circuits. Analytical expressions for the transfer curves of an inverter based on two depletion-mode p-type organic thin-film transistors (OTFTs) were calculated. Based on these expressions, the values for the noise margin of organic-based inverters were calculated. In this paper, the influence of the OTFT parameters on the noise margin is presented. Knowing that statistical variations of the transistor parameters are inherent to OTFT technology, these statistical variations are also taken into account. Finally, a circuit yield analysis is presented.

引用

页码：601 / 610

页数：10

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