Properties of Al-doped ZnO thin film sputtered from powder compacted target

被引：40

作者：

Kim, KH ^{[1
]}

Wibowo, RA ^{[1
]}

Munir, B ^{[1
]}

机构：

[1] Yeungnam Univ, Dept Mat Sci & Engn, Gyeongbuk 712749, South Korea

来源：

MATERIALS LETTERS | 2006年 / 60卷 / 15期

关键词：

sputtering; powder compacted target; Al-doped ZnO; transparent conducting;

D O I：

10.1016/j.matlet.2005.12.055

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrated the characterization of Al-doped ZnO thin film deposited from powder compacted target using RF magnetron sputtering. Various film thicknesses and substrate temperatures were used as deposition parameters for the purpose of obtaining optimum results. It shows that deposited AZO films have stronger preferred (002) c-axis crystalline orientation as both film thickness and Substrate temperature increased. Film's resistivity and sheet resistance significantly decreased as film thickness increased. Higher surface roughness and irregular surface structure occurred at 200 degrees C substrate temperature. Films possess high optical transmittance of approximately 90% and demonstrated an optical band gap of 3.35 eV. At 200 degrees C substrate temperature, a resistivity of 4.4 x 10(-3) Omega cm was obtained. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：1931 / 1935

页数：5

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