Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

被引：525

作者：

Jiang, X

Wong, FL

Fung, MK

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Thin Films COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Univ Siegen, Inst Mat Engn, D-57068 Siegen, Germany

[4] Fraunhofer Inst Surface Engn & Thin Films, D-38108 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期

关键词：

D O I：

10.1063/1.1605805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates. (C) 2003 American Institute of Physics.

引用

页码：1875 / 1877

页数：3

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