THE ELECTRICAL AND OPTICAL-PROPERTIES OF THE ZNO-SNO2 THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING

ZnO-SnO2 thin films are deposited by rf sputtering using a sintered oxide target. As-deposited films show different crystal structures of a hexagonal ZnO, a spinel type intermediate compound Zn2SnO4 or an amorphous by experimental conditions. The Zn2SnO4 films show higher than 80% transmissivity over the visible range and their lower side absorption edge is less than 320 nm. The electrical resistivity of as sputtered Zn2SnO4 films is about 5.0 x 10(-2) OMEGA cm and is decreased up to about 1.7 x 10(-2) OMEGA cm by a vacuum annealing due to the rapid increase of both, oxygen vacancies and carrier concentration. The resistivity and transmissivity of the amorphous ZnO-SnO2 films are almost the same values as that of Zn2SnO4 films.