CDO-SNO2 THIN-FILMS PREPARED BY DC SPUTTERING WITH OXIDE TARGETS

被引：7

作者：

ENOKI, H

SATOH, T

ECHIGOYA, J

机构：

[1] Department of Materials Processing, Faculty of Engineering, Tohoku University, Sendai

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 01期

关键词：

D O I：

10.1002/pssa.2211260118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium-tin oxide (CTO) thin films are prepared by dc sputtering using sintered CdO-(10 to 33) mol% SnO2 targets in an Ar atmosphere with various substrate temperatures. Amorphous films are grown at the substrate temperature range from 323 to 573 K. Above 673 K, as deposited films show the crystalline structure of a Cd2SnO4 or CdSnO3 intermediate compound. The amorphous films have about 1.0 x 10(-3) OMEGA cm resistivity and higher than 80% transmissivity over the visible range. These values of the amorphous CTO films are almost the same as the values of Cd2SnO4 films.

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页码：163 / 170

页数：8

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