β-Ga2O3 nanowires synthesized from milled GaN powders

被引：95

作者：

Kim, BC

Sun, KT

Park, KS

Im, KJ

Noh, T

Sung, MY

Kim, S ^{[1
]}

Nahm, S

Choi, YN

Park, SS

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[3] Korea Atom Energy Res Inst, Hanaro Ctr, Taejon 305600, South Korea

[4] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 03期

关键词：

D O I：

10.1063/1.1435073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

White-colored materials synthesized by a thermal annealing of milled GaN powders at 930degreesC in a nitrogen atmosphere were identified to be monoclinic beta-Ga2O3 nanowires by x-ray diffraction and scanning electron microscopy. High-resolution transmission electron microscopy revealed that these nanowires are single nanocrystals, and energy dispersive x-ray indicated that these nanomaterials are free of any metals. In addition, bundles of these crystalline nanowires in the rectangular-pole shape are a few centimeters in length. (C) 2002 American Institute of Physics.

引用

页码：479 / 481

页数：3

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