Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

被引：189

作者：

Kamath, K

Bhattacharya, P

Sosnowski, T

Norris, T

Phillips, J

机构：

[1] Solid State Electronics Laboratory, Dept. of Elec. Eng. and Comp. Sci., University of Michigan, Ann Arbor

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 15期

关键词：

semiconductor quantum dots; semiconductor junction lasers;

D O I：

10.1049/el:19960921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 mu m and J(th) = 650 A/cm(2) for a 90 mu m x 1 mm broad-area laser. Steady-state and time-resolved photoluminescence measurements confirm that lasing occurs through the e(1)-hh(2) higher-order transition, and the spontaneous recombination time for this transition is similar or equal to 200 ps.

引用

页码：1374 / 1375

页数：2

共 13 条

[11] Exciton localization and temperature stability in self-organized InAs quantum dots
Lubyshev, DI
GonzalezBorrero, PP
Marega, E
Petitprez, E
LaScala, N
Basmaji, P
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (02) : 205 - 207
[12] Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1-xAs/GaAs system
Pamulapati, J
Bhattacharya, PK
Singh, J
Berger, PR
Snyder, CW
Orr, BG
Tober, RL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) : 479 - 483
[13] TIME-RESOLVED OPTICAL CHARACTERIZATION OF INGAAS/GAAS QUANTUM DOTS
WANG, G
FAFARD, S
LEONARD, D
BOWERS, JE
MERZ, JL
PETROFF, PM
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2815 - 2817

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