Hole mobility in polyfluorene/fullerene blends has been studied with field effect transistors. Two different C60 derivatives and one C70 derivative have been investigated together with two different polyfluorenes. Mobility is presented as a function of acceptor loading at ratios suitable for photovoltaics and varies between 10(-3) and 10(-5) cm(2) V-1 s(-1) depending on the polymer/acceptor combination. The hole mobility is increased in blends with the commonly used acceptor [6-6]-phenyl-C-61-butyric acid methylester (PCBM). With related C60 and C70 derivatives the hole mobility is decreased under the same circumstances. (c) 2006 American Institute of Physics.