Photoluminescence excitation and quenching spectra in CVD diamond films

被引：20

作者：

Iakoubovskii, K

Adriaenssens, GJ

Nesládek, M

Stals, LM

机构：

[1] Katholieke Univ Leuven, Lab Halfgeleiderfys, B-3001 Heverlee, Belgium

[2] Univ Limburg, Inst Mat Res, B-3590 Diepenbeek, Belgium

来源：

DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 2-5期

关键词：

CVD; nitrogen; photoluminescence; vacancy complexes;

D O I：

10.1016/S0925-9635(98)00355-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence excitation and quenching spectroscopy techniques were applied to the red band, and the 1.68, 1.945 and 2.156 eV lines in chemical vapour deposition diamond films. Ground state positions for the 1.68, 1.945 and 2.156 eV centers are found as E-C -2.1, -2.0 and -2.8 eV, respectively. Interpretation of the 1.945 and 2.156 eV centers as [N-V](-) and [N-V](0) defect states is supported. (C) 1999 Elsevier Science S.A. All rights reserved.

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页码：717 / 720

页数：4

相关论文

共 17 条

[1] THE ORIGIN OF THE BROAD-BAND LUMINESCENCE AND THE EFFECT OF NITROGEN DOPING ON THE OPTICAL-PROPERTIES OF DIAMOND FILMS [J].

BERGMAN, L ;

MCCLURE, MT ;

GLASS, JT ;

NEMANICH, RJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) :3020-3027

[2] SITE SYMMETRY ANALYSIS OF THE 738 NM DEFECT IN DIAMOND [J].

BROWN, SW ;

RAND, SC .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :4069-4075

[3]

Davies G., 1979, PROPERTIES DIAMOND, P165

[4] EVIDENCE OF DONOR-ACCEPTOR PAIR RECOMBINATION FROM A NEW EMISSION BAND IN SEMICONDUCTING DIAMOND [J].

FREITAS, JA ;

KLEIN, PB ;

COLLINS, AT .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2136-2138

[5] LUMINESCENCE STUDIES OF NITROGEN-DOPED AND BORON-DOPED DIAMOND FILMS [J].

FREITAS, JA ;

DOVERSPIKE, K ;

KLEIN, PB ;

KHONG, YL ;

COLLINS, AT .

DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :821-824

[6] The twelve-line 1.682eV luminescence center in diamond and the vacancy-silicon complex [J].

Goss, JP ;

Jones, R ;

Breuer, SJ ;

Briddon, PR ;

Oberg, S .

PHYSICAL REVIEW LETTERS, 1996, 77 (14) :3041-3044

[7] Measurement of decay time for the NV centre in Ib diamond with a picosecond laser pulse [J].

Hanzawa, H ;

Nisida, Y ;

Kato, T .

DIAMOND AND RELATED MATERIALS, 1997, 6 (11) :1595-1598

[8]

IAKOUBOVSKII K, 1999, IN PRESS PHYS STAT A, V172

[9] DONOR-ACCEPTOR PAIR RECOMBINATION IN SYNTHETIC TYPE-IIB SEMICONDUCTING DIAMOND [J].

KLEIN, PB ;

CROSSFIELD, MD ;

FREITAS, JA ;

COLLINS, AT .

PHYSICAL REVIEW B, 1995, 51 (15) :9634-9642

[10] Change of absorption spectra in type-Ib diamond with heavy neutron irradiation [J].

Mita, Y .

PHYSICAL REVIEW B, 1996, 53 (17) :11360-11364