The twelve-line 1.682eV luminescence center in diamond and the vacancy-silicon complex

被引:269
作者
Goss, JP
Jones, R
Breuer, SJ
Briddon, PR
Oberg, S
机构
[1] UNIV NEWCASTLE UPON TYNE,DEPT PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND
[2] UNIV LULEA,DEPT MATH,S-95187 LULEA,SWEDEN
关键词
D O I
10.1103/PhysRevLett.77.3041
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.
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页码:3041 / 3044
页数:4
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