The twelve-line 1.682eV luminescence center in diamond and the vacancy-silicon complex

被引：269

作者：

Goss, JP

Jones, R

Breuer, SJ

Briddon, PR

Oberg, S

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

[2] UNIV LULEA,DEPT MATH,S-95187 LULEA,SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.77.3041

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ab initio cluster methods are used to investigate vacancy-impurity complexes in diamond. We assign the 1.682 eV, twelve-line optical band to a vacancy-Si complex which has a very unusual, possibly unique structure with a Si atom at the center of a split vacancy. The method also successfully accounts for the 1.945, 2.156, and 2.985 eV optical transitions in trigonal vacancy-N defects and estimates of radiative lifetimes are given.

引用

页码：3041 / 3044

页数：4

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