Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates

被引：46

作者：

Mikroulis, S

Georgakilas, A

Kostopoulos, A

Cimalla, V

Dimakis, E

Komninou, P

机构：

[1] FORTH, Inst Elect Struct & Laser, Microelect Res Grp, Iraklion 71110, Greece

[2] Univ Crete, Dept Phys, Iraklion, Greece

[3] Aristotelian Univ Thessaloniki, Dept Phys, Solid State Sect, GR-54006 Thessaloniki, Greece

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 16期

关键词：

D O I：

10.1063/1.1472481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nitridation of Al2O3 (0001) substrate surfaces by radio-frequency nitrogen plasma has been investigated. A 1.5-nm-thick surface nitride layer occurred for 100 min nitridation at high substrate temperature, while the nitridation appeared to be limited to a surface atomic plane at low temperature. In-plane lattice constant relaxation was observed in both cases. A high nitridation temperature resulted into a Ga face and a low temperature to N-face polarity of overgrown GaN films. However, low temperature nitridation and an AlN buffer layer also produced a Ga-face polarity. The results are consistent with low formation energy of AlN/sapphire films with Ga-face polarity. (C) 2002 American Institute of Physics.

引用

页码：2886 / 2888

页数：3

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