Energetics of AlN thin films on the Al2O3(0001) surface

被引：53

作者：

Di Felice, R ^{[1
]}

Northrup, JE ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.122044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an ab initio study of the energetics and atomic structure of films consisting of approximately 1 bilayer of AIN on the c-plane sapphire surface. We show that these films are unstable with respect to three-dimensional islands, and we attribute this instability to both strain and chemical mismatch between the oxide and the nitride. The relative stability of the AIN films depends on the chemical potentials of Al and N. Films having (0001) polarity are expected to form under Al-rich conditions. Films with (000 (1) over bar) polarity appear to form only for undersaturation conditions of bulk AIN in the initial stages of growth. (C) 1998 American Institute of Physics.

引用

页码：936 / 938

页数：3

共 16 条

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