In situ characterization of atomic layer deposition processes by a mass spectrometer

被引:27
作者
Ritala, M
Juppo, M
Kukli, K
Rahtu, A
Leskelä, M
机构
[1] Univ Helsinki, Inorgan Chem Lab, FIN-00014 Helsinki, Finland
[2] Tartu State Univ, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia
来源
JOURNAL DE PHYSIQUE IV | 1999年 / 9卷 / P8期
关键词
D O I
10.1051/jp4:19998127
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In situ characterization of the chemical reactions in atomic layer deposition (ALD) processes in flow-type reactors is an important and challenging task. For this purpose, a quadrupole mass spectrometer has been integrated to an ALD reactor. The special features of this setup are described and its performance is demonstrated by studies on ALD oxide processes employing Al(CH3)(3), Ti(OC2H5)(4), Ta(OC2H5)(5) and Nb(OC2H5)(5) as metal precursors and water as the oxygen source.
引用
收藏
页码:1021 / 1028
页数:8
相关论文
共 30 条
[1]   Control of thin film structure by reactant pressure in atomic layer deposition of TiO2 [J].
Aarik, J ;
Aidla, A ;
Sammelselg, V ;
Siimon, H ;
Uustare, T .
JOURNAL OF CRYSTAL GROWTH, 1996, 169 (03) :496-502
[2]   Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O [J].
Aarik, J ;
Kukli, K ;
Aidla, A ;
Pung, L .
APPLIED SURFACE SCIENCE, 1996, 103 (04) :331-341
[3]   DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS [J].
AARIK, J ;
AIDLA, A ;
KUKLI, K ;
UUSTARE, T .
JOURNAL OF CRYSTAL GROWTH, 1994, 144 (1-2) :116-119
[4]   Growth mechanisms in atomic layer epitaxy of GaAs [J].
Ares, R ;
Watkins, SP ;
Yeo, P ;
Horley, GA ;
O'Brien, P ;
Jones, AC .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3390-3397
[5]   NEW MECHANISMS FOR CHEMISTRY AT SURFACES [J].
CEYER, ST .
SCIENCE, 1990, 249 (4965) :133-139
[6]   ATOMIC LAYER CONTROLLED DEPOSITION OF SIO2 AND AL2O3 USING ABAB - BINARY REACTION SEQUENCE CHEMISTRY [J].
GEORGE, SM ;
SNEH, O ;
DILLON, AC ;
WISE, ML ;
OTT, AW ;
OKADA, LA ;
WAY, JD .
APPLIED SURFACE SCIENCE, 1994, 82-3 :460-467
[7]   DISPERSION AND DISTRIBUTION OF TITANIUM SPECIES BOUND TO SILICA FROM TICL4 [J].
HAUKKA, S ;
LAKOMAA, EL ;
JYLHA, O ;
VILHUNEN, J ;
HORNYTZKYJ, S .
LANGMUIR, 1993, 9 (12) :3497-3506
[8]   AN IR AND NMR-STUDY OF THE CHEMISORPTION OF TICL4 ON SILICA [J].
HAUKKA, S ;
LAKOMAA, EL ;
ROOT, A .
JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (19) :5085-5094
[9]   MASS-SPECTROMETRY STUDY OF ZNS ATOMIC LAYER EPITAXY PROCESS [J].
HYVARINEN, J ;
SONNINEN, M ;
TORNQVIST, R .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :695-699
[10]   IN-SITU MONITORING OF THE GROWTH-PROCESS IN GAAS ATOMIC LAYER EPITAXY BY GRAVIMETRIC AND OPTICAL METHODS [J].
KOUKITU, A ;
TAKAHASHI, N ;
SEKI, H .
JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :467-474