Schottky barrier between 6H-SiC and graphite:: Implications for metal/SiC contact formation

被引：90

作者：

Seyller, Th. ^{[1
]}

Emtsev, K. V. ^{[1
]}

Speck, F. ^{[1
]}

Gao, K. -Y. ^{[1
]}

Ley, L. ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期

关键词：

D O I：

10.1063/1.2213928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using photoelectron spectroscopy we have determined the Schottky barrier between 6H-SiC(0001) and graphite layers grown by solid state graphitization. For n-type 6H-SiC(0001) we find a low Schottky barrier of phi(bn)=0.3 +/- 0.1 eV. For p-type SiC(0001) a rather large value of phi(bp)=2.7 +/- 0.1 eV was determined. It is proposed that these extreme values are likely to have an impact on the electrical behavior of metal/SiC contacts subjected to postdeposition anneals. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

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