Catalytic graphitization and Ohmic contact formation on 4H-SiC

被引:54
作者
Lu, WJ [1 ]
Mitchel, WC
Landis, GR
Crenshaw, TR
Collins, WE
机构
[1] Fisk Univ, Dept Phys, Nashville, TN 37208 USA
[2] USAF, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[3] Univ Dayton, Res Inst, Dayton, OH 45469 USA
关键词
D O I
10.1063/1.1562737
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical contact properties and graphitic structures of metal/carbon/4H-SiC structures are investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts are formed on Ni/C, Co/C, Cr/C, and NiCr/C films on 4H-SiC with n-type, C-face, and a doping concentration of 1.8x10(19) cm(-3) . Only Ni/C and Co/C films exhibit Ohmic contact behavior on SiC with n-type, Si-face, and a doping concentration of 1.6x10(18) cm(-3). Ni and Co are well known as excellent graphitization catalysts. Raman spectra show that the formation of graphitic carbon is related to the formation of Ohmic contacts in the annealed metal/carbon/SiC structures. Generally accepted catalytic graphitization mechanisms are applied to explain the scanning electron microscopy images, which demonstrate a relationship between the catalytically reacted morphology and Ohmic contact behavior. This study provides evidence that the metals with better catalytic graphitization activities form better Ohmic contacts on metal/carbon/SiC structures. (C) 2003 American Institute of Physics.
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收藏
页码:5397 / 5403
页数:7
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