Local stresses induced by nanoscale As-Sb clusters in GaAs matrix

被引:30
作者
Chaldyshev, VV [1 ]
Bert, NA
Romanov, AE
Suvorova, AA
Kolesnikova, AL
Preobrazhenskii, VV
Putyato, MA
Semyagin, BR
Werner, P
Zakharov, ND
Claverie, A
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Inst Problems Mech Engn, St Petersburg 194021, Russia
[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[4] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Germany
[5] CNRS, CEMES, F-31055 Toulouse 4, France
关键词
D O I
10.1063/1.1426691
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microstructure of GaAs films grown by molecular-beam epitaxy at low temperature and delta doped with Sb was studied by transmission electron microscopy. The material contained 0.5 at. % excess of arsenic that precipitated during post growth anneals. The Sb delta doping was found to strongly affect the microstructure of precipitates (clusters) and their ripening rate upon annealing. Segregation of Sb impurity in the clusters was revealed. In contrast to the well known pure As clusters, the As-Sb clusters induced strong local deformations in the surrounding GaAs matrix. Until a threshold diameter of 7-8 nm the clusters and surrounding matrix were coherently strained. Larger clusters were associated with dislocation loops of interstitial type. The cluster-loop orientation relationships were determined. Relaxation of local strains by formation of the dislocation loops was studied both experimentally and theoretically. (C) 2002 American Institute of Physics.
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页码:377 / 379
页数:3
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