2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS

被引：37

作者：

CHENG, TM ^{[1
]}

CHANG, CY ^{[1
]}

CHIN, A ^{[1
]}

HUANG, MF ^{[1
]}

HUANG, JH ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.

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页码：2517 / 2519

页数：3

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