ARSENIC PRECIPITATES IN AL0.3GA0.7AS/GAAS MULTIPLE SUPERLATTICE AND QUANTUM-WELL STRUCTURES

被引：44

作者：

MAHALINGAM, K

OTSUKA, N

MELLOCH, MR

WOODALL, JM

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

[2] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattices and quantum well structures which were grown at low substrate temperatures by molecular beam epitaxy were studied by transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including confinement of precipitates in GaAs wells and nearly complete depletion of precipitates in a short period superlattice. It is shown that these observed microstructures can be explained as a result of the difference of precipitate/matrix interfacial energies in GaAs and Al0.3Ga0.7As.

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页码：3253 / 3255

页数：3

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