EFFECT OF A GAAS BUFFER LAYER GROWN AT LOW SUBSTRATE TEMPERATURES ON A HIGH-ELECTRON-MOBILITY MODULATION-DOPED TWO-DIMENSIONAL ELECTRON-GAS

被引：64

作者：

MELLOCH, MR

MILLER, DC

DAS, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.101358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：943 / 945

页数：3

相关论文

共 6 条

[1] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS
ENGLISH, JH
GOSSARD, AC
STORMER, HL
BALDWIN, KW
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828
[2] BACKGATING AND LIGHT SENSITIVITY IN ION-IMPLANTED GAAS INTEGRATED-CIRCUITS
GORONKIN, H
BIRRITTELLA, MS
SEELBACH, WC
VAITKUS, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) : 845 - 850
[3] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
SAITO, J
NANBU, K
ISHIKAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
[4] KOCOT C, 1982, IEEE T ELECTRON DEV, V29, P1059
[5] LIN BJF, 1988 DEV RES C BOULD
[6] NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS
SMITH, FW
CALAWA, AR
CHEN, CL
MANFRA, MJ
MAHONEY, LJ
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) : 77 - 80