学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
BACKGATING AND LIGHT SENSITIVITY IN ION-IMPLANTED GAAS INTEGRATED-CIRCUITS
被引:38
作者
:
GORONKIN, H
论文数:
0
引用数:
0
h-index:
0
GORONKIN, H
BIRRITTELLA, MS
论文数:
0
引用数:
0
h-index:
0
BIRRITTELLA, MS
SEELBACH, WC
论文数:
0
引用数:
0
h-index:
0
SEELBACH, WC
VAITKUS, RL
论文数:
0
引用数:
0
h-index:
0
VAITKUS, RL
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1982年
/ 29卷
/ 05期
关键词
:
D O I
:
10.1109/T-ED.1982.20789
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:845 / 850
页数:6
相关论文
共 7 条
[1]
PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
ZUCCA, R
LONG, SI
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
LONG, SI
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
: 221
-
239
[2]
FRARY JM, COMMUNICATION
[3]
DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET
FUKUI, H
论文数:
0
引用数:
0
h-index:
0
FUKUI, H
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1979,
58
(03):
: 771
-
797
[4]
LIGHT-INDUCED EFFECTS IN GAAS-FETS
GRAFFEUIL, J
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et d'Analyse des Systèmes, Centre National de la Recherche Scientifique, 31400 Toulouse, 7, avenue du Colonel Roche
GRAFFEUIL, J
ROSSEL, P
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et d'Analyse des Systèmes, Centre National de la Recherche Scientifique, 31400 Toulouse, 7, avenue du Colonel Roche
ROSSEL, P
MARTINOT, H
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et d'Analyse des Systèmes, Centre National de la Recherche Scientifique, 31400 Toulouse, 7, avenue du Colonel Roche
MARTINOT, H
[J].
ELECTRONICS LETTERS,
1979,
15
(14)
: 439
-
441
[5]
HILSUM C, 1960, P INT C SEMICONDUCTO, P962
[6]
CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS
HOWER, PL
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
HOWER, PL
BECHTEL, NG
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
BECHTEL, NG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 213
-
220
[7]
DISTRIBUTED SEMICONDUCTOR R-C NETWORK ANALYSIS FOR VARIOUS ELECTRODE CONFIGURATIONS
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
LEHOVEC, K
FEDOTOWSKY, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
FEDOTOWSKY, A
CRAIN, DW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
CRAIN, DW
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(03)
: 249
-
254
←
1
→
共 7 条
[1]
PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
ZUCCA, R
LONG, SI
论文数:
0
引用数:
0
h-index:
0
机构:
Rockwell International Science Center, Thousand Oaks
LONG, SI
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
: 221
-
239
[2]
FRARY JM, COMMUNICATION
[3]
DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET
FUKUI, H
论文数:
0
引用数:
0
h-index:
0
FUKUI, H
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1979,
58
(03):
: 771
-
797
[4]
LIGHT-INDUCED EFFECTS IN GAAS-FETS
GRAFFEUIL, J
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et d'Analyse des Systèmes, Centre National de la Recherche Scientifique, 31400 Toulouse, 7, avenue du Colonel Roche
GRAFFEUIL, J
ROSSEL, P
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et d'Analyse des Systèmes, Centre National de la Recherche Scientifique, 31400 Toulouse, 7, avenue du Colonel Roche
ROSSEL, P
MARTINOT, H
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Automatique et d'Analyse des Systèmes, Centre National de la Recherche Scientifique, 31400 Toulouse, 7, avenue du Colonel Roche
MARTINOT, H
[J].
ELECTRONICS LETTERS,
1979,
15
(14)
: 439
-
441
[5]
HILSUM C, 1960, P INT C SEMICONDUCTO, P962
[6]
CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS
HOWER, PL
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
HOWER, PL
BECHTEL, NG
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE ELECT CORP,RES & DEV CTR,PITTSBURGH,PA 15235
BECHTEL, NG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(03)
: 213
-
220
[7]
DISTRIBUTED SEMICONDUCTOR R-C NETWORK ANALYSIS FOR VARIOUS ELECTRODE CONFIGURATIONS
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
LEHOVEC, K
FEDOTOWSKY, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
FEDOTOWSKY, A
CRAIN, DW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
CRAIN, DW
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(03)
: 249
-
254
←
1
→