FORMATION OF ARSENIC PRECIPITATES IN GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES

被引：220

作者：

MELLOCH, MR ^{[1
]}

OTSUKA, N ^{[1
]}

WOODALL, JM ^{[1
]}

WARREN, AC ^{[1
]}

FREEOUF, JL ^{[1
]}

机构：

[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250°C). The film structures have been examined using transmission electron microscopy. The layers grown at normal temperatures (600°C) were free of defects or clusters. In contrast, the layer which was grown at low substrate temperatures contained precipitates which have been identified as hexagonal arsenic. The density of the arsenic precipitates is found to be very sensitive to the substrate temperature during growth.

引用

页码：1531 / 1533

页数：3

共 15 条

[1] BALLINGALL JM, 1990, APR WORKSH LOW TEMP
[2] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL
CULLIS, AG
AUGUSTUS, PD
STIRLAND, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2556 - 2560
[3] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS
ENGLISH, JH
GOSSARD, AC
STORMER, HL
BALDWIN, KW
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1826 - 1828
[4] TWO-DIMENSIONAL ELECTRON-GAS STRUCTURES WITH MOBILITIES IN EXCESS OF 3X106CM2V-1 S-1
HARRIS, JJ
FOXON, CT
BARNHAM, KWJ
LACKLISON, DE
HEWETT, J
WHITE, C
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1219 - 1221
[5] STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
KAMINSKA, M
LILIENTALWEBER, Z
WEBER, ER
GEORGE, T
KORTRIGHT, JB
SMITH, FW
TSAUR, BY
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1881 - 1883
[6] ANNEALING OF GAAS SINGLE-CRYSTAL - RELATIONSHIP BETWEEN ELECTRICAL-PROPERTIES AND STRUCTURAL DEFECTS
LEE, BT
BOURRET, ED
GRONSKY, R
PARK, I
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1030 - 1035
[7] LILIENTALWEBER Z, 1990, APR WORKSH LOW TEMP
[8] ANOMALIES IN MODFETS WITH A LOW-TEMPERATURE BUFFER
LIN, BJF
KOCOT, CP
MARS, DE
JAEGER, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) : 46 - 50
[9] LIN BJF, 1988, 46TH DEV RES C
[10] EFFECT OF A GAAS BUFFER LAYER GROWN AT LOW SUBSTRATE TEMPERATURES ON A HIGH-ELECTRON-MOBILITY MODULATION-DOPED TWO-DIMENSIONAL ELECTRON-GAS
MELLOCH, MR
MILLER, DC
DAS, B
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (10) : 943 - 945

← 1 2 →