ANNEALING OF GAAS SINGLE-CRYSTAL - RELATIONSHIP BETWEEN ELECTRICAL-PROPERTIES AND STRUCTURAL DEFECTS

被引：23

作者：

LEE, BT

BOURRET, ED

GRONSKY, R

PARK, I

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,NATL CTR ELECTRON MICROSCOPY,BERKELEY,CA 94720

[4] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1030 / 1035

页数：6

共 35 条

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[2]

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[5]

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[6]

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[7]

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[9]

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[10]

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