MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] SIMPLE ROTATING JET-THINNING APPARATUS FOR PRODUCING TAPER SECTIONS AND ELECTRON-MICROSCOPE SPECIMENS FROM SILICON AND COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) : 1991 - &

[3] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339

[4] ANNEALING-INDUCED PRISMATIC DISLOCATION LOOPS AND ELECTRICAL CHANGES IN HEAVILY TE-DOPED GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (02): : 627 - 637

[5] INTERSTITIAL CONDENSATION IN N+ GAAS [J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (09) : 1636 - 1641

[6] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &

[7] Nomarski G., 1955, REV MET PARIS, V52, P121, DOI [10.1051/metal/195552020121, DOI 10.1051/METAL/195552020121]

[8] IDENTIFICATION OF SAUCER-PIT (S-PIT) DEFECTS IN GAAS [J]. JOURNAL OF MATERIALS SCIENCE, 1978, 13 (03) : 657 - 665

[9] DISLOCATION ETCH-MEMORY EFFECT IN GALLIUM-ARSENIDE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (01): : K1 - K4

[10] REVIEW OF ETCHING AND DEFECT CHARACTERIZATION OF GALLIUM-ARSENIDE SUBSTRATE MATERIAL [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 139 - 170

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] SIMPLE ROTATING JET-THINNING APPARATUS FOR PRODUCING TAPER SECTIONS AND ELECTRON-MICROSCOPE SPECIMENS FROM SILICON AND COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (17) : 1991 - &

[3] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339

[4] ANNEALING-INDUCED PRISMATIC DISLOCATION LOOPS AND ELECTRICAL CHANGES IN HEAVILY TE-DOPED GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (02): : 627 - 637

[5] INTERSTITIAL CONDENSATION IN N+ GAAS [J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (09) : 1636 - 1641

[6] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &

[7] Nomarski G., 1955, REV MET PARIS, V52, P121, DOI [10.1051/metal/195552020121, DOI 10.1051/METAL/195552020121]

[8] IDENTIFICATION OF SAUCER-PIT (S-PIT) DEFECTS IN GAAS [J]. JOURNAL OF MATERIALS SCIENCE, 1978, 13 (03) : 657 - 665

[9] DISLOCATION ETCH-MEMORY EFFECT IN GALLIUM-ARSENIDE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (01): : K1 - K4

[10] REVIEW OF ETCHING AND DEFECT CHARACTERIZATION OF GALLIUM-ARSENIDE SUBSTRATE MATERIAL [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 139 - 170