DISLOCATION ETCH-MEMORY EFFECT IN GALLIUM-ARSENIDE

被引：30

作者：

STIRLAND, DJ ^{[1
]}

OGDEN, R ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 17卷 / 01期

关键词：

D O I：

10.1002/pssa.2210170141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：K1 / K4

页数：4

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