IDENTIFICATION OF SAUCER-PIT (S-PIT) DEFECTS IN GAAS

被引：29

作者：

STIRLAND, DJ ^{[1
]}

AUGUSTUS, PD ^{[1
]}

STRAUGHAN, BW ^{[1
]}

机构：

[1] ROYAL SIGNALS RADAR ESTAB, MALVERN, WORCESTERSHIRE, ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1978年 / 13卷 / 03期

关键词：

D O I：

10.1007/BF00541816

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：657 / 665

页数：9

共 29 条

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[4]

GRADMAIER JG, 1969, PHYS STATUS SOLIDI, V32, pK13

[5]

HIRSCH PB, 1965, ELECTRON MICROS, P165

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[7] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1974, 30 (01) :65-73

[8] INVESTIGATION OF MICROPRECIPITATES IN HIGHLY TE-DOPED GAAS CRYSTALS [J].

IIZUKA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) :490-&

[9] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS [J].

IIZUKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1190-&

[10] IMAGE CONTRAST OF TRIPLE LOOPS IN TELLURIUM-DOPED GALLIUM ARSENIDE [J].

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JENKINS, GM .

PHILOSOPHICAL MAGAZINE, 1969, 20 (164) :361-&

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